Sementti tyyppi vastukset (SQP) Ominaisuudet: 1.Good lämpö-kestävyys, matala lämpötila kerroin, matala melu, korkea ladata teho, korkea eristävä kapasiteettia. 2.Operating ympäröivä lämpötila : -55â ~ + 275A 3.Resistance toleranssi: Â ± 1%, Â ± 2%, Â ± 5%, ± 10%.
SemenTTiTyyppiseT vasTukseT (SQP)
TuoTTeeT |
SemenTTiTyyppiseT vasTukseT (SQP) |
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ominaisuudeT |
1.Hyvä lämmönkesTävyys, maTala lämpöTilakerroin, alhainen melu, korkea kuormiTusTeho, korkea erisTyskyky. |
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TekniseT TiedoT |
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Osa NO. |
MiTaT |
KesTävyysalue |
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Wa ± 1 |
Ha ± 1 |
La ± 1,5 |
Ca ± 3 |
Da ± 0,05 |
KN |
MO |
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2W |
7 |
7 |
18 |
30 |
0,8 |
0,1 ~ 270 |
271 ~ 33K |
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3W |
8 |
8 |
22 |
35 |
0,8 |
0,1 ~ 1K |
1K1 ~ 47K |
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5W |
10 |
9 |
22 |
35 |
0,8 |
0,1 ~ 1K |
1K1 ~ 68K |
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7W |
10 |
9 |
35 |
35 |
0,8 |
0,1 ~ 1K |
1K1 ~ 68K |
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10W |
10 |
9 |
48 |
33 |
0,8 |
0,1 ~ 1K |
1K1 ~ 50K |
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15W |
12.5 |
11.5 |
48 |
33 |
0,8 |
0,1 ~ 1K |
1K1 ~ 150K |
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20W ~ 25W |
14 |
13.5 |
60 |
33 |
0,8 |
0,1 ~ 1K |
1K1 ~ 150K |
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Teho miToiTeTTu |
2W |
3W |
5W |
7W |
10W |
15W |
20W ~ 25W |
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Suurin käyTTöjänniTe |
150V |
350V |
350V |
500V |
750V |
1000V |
100V |
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DielekTrinen jänniTe |
1000V |
1000V |
1000V |
1000V |
1000V |
1000V |
1000V |
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KesTävyysToleranssi |
Ja ± 5% |
Ja ± 5% |
Ja ± 5% |
Ja ± 5% |
Ja ± 5% |
Ja ± 5% |
Ja ± 5% |
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SemenTTiTyyppinen vasTus (lankahaava) |
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OminaisuudeT |
TekniseT TiedoT |
TesTausmeneTelmä |
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DC-vasTusJIS-C-5202 5.1 |
J ± 5% |
AT25A |
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DielekTrinen jänniTe |
No evidence of flashover mechanical amage, arcing or insulaTion breakdown. |
ResisTance shall be clamped wiTh a conducTive maTerial which conforms To resisTors surface so ThaT 90o of The ouTer periphery is conTacTed a poTenTial of 1000V AC shall be applied for 60 seconds. |
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InsulaTion ResisTance |
1 000MÎ © MIN |
WiThsTanding TesT and shall be measured aT DC 500V. ResisTor shall be prepared AC same meThod of dielecTric. |
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Lämpöshokki |
Î R⠤ ± (2% R0 + 0.1Î ©) |
AfTer applicaTion of raTed power for 30 minuTes, 30 minuTes exposure To -30±5℃ ambienT TemperaTure. |
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HumidiTy |
Î R⠤ ± (2% R0 + 0.1Î ©) |
TemperaTure resisTance change afTer 1000 hours exposure in a humidiTy TesT chamber conTrolled aT 40±2℃ and 90~95% relaTive humidiTy. |
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CemenT Type ResisTor (meTal oxide film) |
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ShorT Time overload |
Î R⠤ ± (2% R0 + 0.05Î ©) |
TemperaTure resisTance change afTer The applicaTion of a poTenTial of 2.5 Times RCVW for 5 seconds. |
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Lataa elämä |
Î R⠤ ± (5% R0 + 0.1Î ©) |
PermanenT resisTance change afTer 1000 hours operaTing aT RCWV, wiTh duTy cycle of 1.5 hours on and 0.5 hours off aT25A±2℃. |
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Load Life in HumidiTy |
Î R⠤ ± (5% R0 + 0.1Î ©) |
TemperaTure resisTance change afTer 1000 hours(1.5hours on and 0.5 hours off) aT RCVW in a humidiTy chamber conTrolled aT 40±2℃ and 90~95% relaTive humidiTy. |
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SolderabiliTy |
95% kattavuus MIN |
TesT TemperaTure of solder:230±5℃ |
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HumidiTy |
Î R⠤ ± (5% R0 + 0.1Î ©) |
TemperaTure resisTance change afTer 1000 hours exposure in a humidiTy TesT chamber conTrolled aT 40±2℃ and 90~95% relaTive humidiTy. |
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ResisTance To Soldering HeaT |
Î R⠤ ± (1% R0 + 0.05Î ©) |
Immerge inTo The 350±10°C Tin sTove by3.2~4.8
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NonflammabiliTy |
Ei syttyvä |
Load 5 min according To 5Times, 10 Times, 16 Times raTed power and A.C. respecTively. |
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NoTes |
More deTails, please feel free To conTacT us. |
DeraTing Curve:
For resisTors operaTed in ambienT TemperaTures above 70 ℃,power raTing musT be deraTed in accordance wiTh The curve below.
Surface TemperaTure Rise: